The global discrete semiconductor market is anticipated to grow at a CAGR of 12.7% during the forecast period (2023-2030). The discrete semiconductor market is driven by the increasing demand for managed power across electronics and miniaturization. The semiconductor industry is focused on individual electronic components, such as diodes, transistors, and rectifiers. These components perform specific functions within electronic circuits and integrated into larger semiconductor chips or integrated circuits. The discrete semiconductor market plays a crucial role in various electronic applications, from power management to signal processing.
Browse the full report description of “Discrete Semiconductor Market Size, Share & Trends Analysis Report by Type (Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), Insulated-Gate Bipolar Transistor (IGBT), Diode, Bipolar Transistor, Thyristor, Rectifier and Others), and by End Users (Automotive, Consumer Electronics, Communication, Industrial and Others), Forecast Period (2023-2030)” at https://www.omrglobal.com/industry-reports/discrete-semiconductor-market
One way to reduce power loss in power semiconductors is to reduce the distance through which the electricity flows by making a thinner substrate element. This series uses a SiC (silicon carbide) substrate with a reduced thickness. For instance, in November 2021, Fuji Electric Co., Ltd. launched its 2nd-generation discrete SiC-SBD* Series of power semiconductors, that contribute to energy saving in data centers and communication base stations. Power semiconductors undergo power loss (steady-state loss) when power is supplied. The company developed its 2nd-generation discrete SiC-SBD Series for power supply equipment of data centers and communication base stations, and it will contribute to energy saving by reducing steady-state loss in electronic circuits.
IGBTs are also fully rated as soft fast reverse-recovery diodes. This means they are suitable for rectifier and bi-directional circuit applications or to protect against overcurrent conditions. For instance, in July 2023, Nexperia launched insulated gate bipolar transistor (IGBT) with a range of 600 V devices, starting with the 30 A NGW30T60M3DF. By adding IGBTs to its extensive portfolio, Nexperia is addressing the growing demand for efficient, high-voltage switching devices with a range of performance and cost requirements.
The electrification of the transportation system is advancing continuously. In addition to passenger cars, 2- and 3-wheelers as well as light vehicles are increasingly being electrified. For instance, in August 2023, Infineon Technologies AG launched automotive 60 V and 120 V OptiMOS™ 5 in TOLx packages for 24 V-72 V supplied high power ECUs. They are offering a compact form factor with very good thermal performance combined with excellent switching behavior.
Market Coverage
• The market number available for – 2022-2030
• Base year- 2022
• Forecast period- 2023-2030
• Segment Covered-
o By Type
o By End Users
• Regions Covered-
o North America
o Europe
o Asia-Pacific
o Rest of the World
• Competitive Landscape- includes Infineon Technologies AG, NXP Semiconductors N.V., ON Semiconductor, Skyworks Solutions, Inc., and others.
Key questions addressed by the report
• What is the market growth rate?
• Which segment and region dominate the market in the base year?
• Which segment and region will project the fastest growth in the market?
• Who is the leader in the market?
• How are players addressing challenges to sustain growth?
• Where is the investment opportunity?
Global Discrete Semiconductor Market Report Segment
By Type
By End Users
Global Discrete Semiconductor Market Report Segment by Region
North America
• United States
• Canada
Europe
• UK
• Germany
• Italy
• Spain
• France
• Rest of Europe
Asia-Pacific
• China
• India
• Japan
• South Korea
• Rest of Asia-Pacific
Rest of the World
• Latin America
• Middle East & Africa
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