Ongoing Developments to Fuel Global Next Generation Memory Market

The global next generation memory market is anticipated to grow at an exponential CAGR of 26.5% during the forecast period (2024-2031). The ongoing research & developments by key players operating in the next generation memory market is a key factor driving the global market. In January 2024, Samsung has created a new research lab in the US to focus on developing next-generation three-dimensional (3D) DRAM. The new lab is operating under Device Solutions America (DSA) headquartered in Silicon Valley, which oversees Samsung's semiconductor production in the US, and will work to develop an upgraded DRAM model. In the same month, Samsung has successfully verified Compute Express Link (CXL) memory operations in a real user environment with open-source software provider Red Hat, leading the expansion of its CXL ecosystem. This is an important milestone in the integration of hardware and software to build an open-source ecosystem for next-generation memory development.

Browse the full report description of “Next Generation Memory Market Size, Share & Trends Analysis Report by Type (Volatile and Non-Volatile), and by Application (BFSI, IT & Telecom, Government, Consumer Electronics, and Others) Forecast Period (2024-2031)” at https://www.omrglobal.com/industry-reports/next-generation-memory-market

Further, in July 2023, KAUST-led researchers have discovered a proton-mediated method that induces multiple phase transitions in ferroelectric materials, potentially facilitating the development of high-performance, low-power memory devices or next-generation memory devices, and neuromorphic computing chips.

Market Coverage

• The market number available for – 2023-2031

• Base year- 2023

• Forecast period- 2024-2031

• Segment Covered- 

o By Type

o By Application

• Regions Covered-

o North America

o Europe

o Asia-Pacific

o Rest of the World

• Competitive Landscape- includes Intel Corp., Micron Technology, Inc., Samsung Electronics Co. Ltd., SK Hynix Inc., and Fujitsu Ltd., among others.

Key questions addressed by the report

• What is the market growth rate?
• Which segment and region dominate the market in the base year?
• Which segment and region will project the fastest growth in the market?
• Who is the leader in the market?
• How are players addressing challenges to sustain growth?
• Where is the investment opportunity?

Global Next Generation Memory Market Report Segment

By Product

• Volatile 
• Hybrid Memory Cube 
• (HMC)
• High Bandwidth Memory
• Non-Volatile 
• Magneto-Resistive Random-Access Memory (MRAM) 
• Ferroelectric RAM (FRAM) 
• Resistive Random-Access Memory (ReRAM) 
• 3D Xpoint Nano RAM 
• Other Non-volatile Technologies (Phase change RAM, STT-RAM, and SRAM)

By Application

• BFSI
• IT & Telecom
• Government
• Consumer Electronics
• Other (Retail)

Global Next Generation Memory Market Report Segment by Region

North America

• United States

• Canada

Europe

• UK

• Germany

• Italy

• Spain

• France

• Rest of Europe 

Asia-Pacific

• China

• India

• Japan

• South Korea

• Rest of Asia-Pacific 

Rest of the World

• Latin America 

• The Middle East & Africa

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